Elaboration of transparent conductive oxide films for flexible organic electroluminescent devices
Identifieur interne : 008D64 ( Main/Repository ); précédent : 008D63; suivant : 008D65Elaboration of transparent conductive oxide films for flexible organic electroluminescent devices
Auteurs : RBID : Pascal:06-0456032Descripteurs français
- Pascal (Inist)
- Dispositif électroluminescent, Haute performance, Diode électroluminescente organique, Couche ITO, Pulvérisation faisceau ionique, Procédé fabrication, Dispositif optoélectronique, Température recuit, Caractéristique optique, Optimisation, Caractéristique électrique, Diffraction RX, Evaluation performance, Matériau transparent, Matériau conducteur, Couche oxyde, Couche mince.
English descriptors
- KwdEn :
- Annealing temperature, Conducting material, Electrical characteristic, Electroluminescent device, High performance, ITO layers, Ion beam sputtering, Manufacturing process, Optical characteristic, Optimization, Optoelectronic device, Organic light emitting diodes, Oxide layer, Performance evaluation, Thin film, Transparent material, X ray diffraction.
Abstract
In this study, we presented high-performance flexible organic light-emitting diodes (FOLEDs); to do so, we prepared indium-tin oxide (ITO) thin layers by ion beam sputtering (IBS) on polyethylene terephtalate (PET) substrates in soft low temperature conditions. The IBS technology seems well adapted to us to adjust the conduction level of the interface films to the one of the various organic materials making up the fabrication processes of the organic optoelectronic components; moreover this technique does not require a high substrate temperature or an annealing after ITO deposition to crystallize the obtained layers. Because of the great number of deposition parameters (oxygen flow, substrate temperature, deposition rate...) playing interdependent roles and strongly influencing the electrical, optical and structural properties of the layers, we optimized the effects of these different parameters separately by using electrical and optical characterizations as well as X-ray diffraction analyses. The performances of FOLEDs on PET substrate with different ITO thicknesses were investigated and compared to the ones of a conventional organic light-emitting diode realized on glass substrate and according to the same device configuration.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Elaboration of transparent conductive oxide films for flexible organic electroluminescent devices</title><author><name sortKey="Lucas, Bruno" uniqKey="Lucas B">Bruno Lucas</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Limoges, Faculté des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Département MINACOM,123 Av Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName><orgName type="university">Université de Limoges</orgName></affiliation></author><author><name sortKey="Rammal, Wassim" uniqKey="Rammal W">Wassim Rammal</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Limoges, Faculté des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Département MINACOM,123 Av Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName><orgName type="university">Université de Limoges</orgName></affiliation></author><author><name>AUMEUR EL AMRANI</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Limoges, Faculté des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Département MINACOM,123 Av Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName><orgName type="university">Université de Limoges</orgName></affiliation></author><author><name sortKey="Moliton, Andre" uniqKey="Moliton A">André Moliton</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Université de Limoges, Faculté des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Département MINACOM,123 Av Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName><orgName type="university">Université de Limoges</orgName></affiliation></author><author><name sortKey="Seguy, Isabelle" uniqKey="Seguy I">Isabelle Seguy</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Université Paul Sabatier, LGET, Bâtiment H. Brunet, 118 Rte de Narbonne</s1><s2>31062 Toulouse</s2><s3>FRA</s3><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Midi-Pyrénées</region><settlement type="city">Toulouse</settlement></placeName><orgName type="university">Université Toulouse III - Paul Sabatier</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">06-0456032</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 06-0456032 INIST</idno><idno type="RBID">Pascal:06-0456032</idno><idno type="wicri:Area/Main/Corpus">008792</idno><idno type="wicri:Area/Main/Repository">008D64</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="main">Proceedings of SPIE, the international Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing temperature</term><term>Conducting material</term><term>Electrical characteristic</term><term>Electroluminescent device</term><term>High performance</term><term>ITO layers</term><term>Ion beam sputtering</term><term>Manufacturing process</term><term>Optical characteristic</term><term>Optimization</term><term>Optoelectronic device</term><term>Organic light emitting diodes</term><term>Oxide layer</term><term>Performance evaluation</term><term>Thin film</term><term>Transparent material</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dispositif électroluminescent</term><term>Haute performance</term><term>Diode électroluminescente organique</term><term>Couche ITO</term><term>Pulvérisation faisceau ionique</term><term>Procédé fabrication</term><term>Dispositif optoélectronique</term><term>Température recuit</term><term>Caractéristique optique</term><term>Optimisation</term><term>Caractéristique électrique</term><term>Diffraction RX</term><term>Evaluation performance</term><term>Matériau transparent</term><term>Matériau conducteur</term><term>Couche oxyde</term><term>Couche mince</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this study, we presented high-performance flexible organic light-emitting diodes (FOLEDs); to do so, we prepared indium-tin oxide (ITO) thin layers by ion beam sputtering (IBS) on polyethylene terephtalate (PET) substrates in soft low temperature conditions. The IBS technology seems well adapted to us to adjust the conduction level of the interface films to the one of the various organic materials making up the fabrication processes of the organic optoelectronic components; moreover this technique does not require a high substrate temperature or an annealing after ITO deposition to crystallize the obtained layers. Because of the great number of deposition parameters (oxygen flow, substrate temperature, deposition rate...) playing interdependent roles and strongly influencing the electrical, optical and structural properties of the layers, we optimized the effects of these different parameters separately by using electrical and optical characterizations as well as X-ray diffraction analyses. The performances of FOLEDs on PET substrate with different ITO thicknesses were investigated and compared to the ones of a conventional organic light-emitting diode realized on glass substrate and according to the same device configuration.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA05><s2>6192</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Elaboration of transparent conductive oxide films for flexible organic electroluminescent devices</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Organic optoelectronics and photonics II : 3-6 April, 2006, Strasbourg, France</s1></fA09><fA11 i1="01" i2="1"><s1>LUCAS (Bruno)</s1></fA11><fA11 i1="02" i2="1"><s1>RAMMAL (Wassim)</s1></fA11><fA11 i1="03" i2="1"><s1>AUMEUR EL AMRANI</s1></fA11><fA11 i1="04" i2="1"><s1>MOLITON (André)</s1></fA11><fA11 i1="05" i2="1"><s1>SEGUY (Isabelle)</s1></fA11><fA12 i1="01" i2="1"><s1>HEREMANS (Paul L.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>MUCCINI (Michele)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>MEULENKAMP (Eric A.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Université de Limoges, Faculté des Sciences et Techniques, CNRS, UMR 6172, Institut de Recherche XLIM, Département MINACOM,123 Av Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Université Paul Sabatier, LGET, Bâtiment H. Brunet, 118 Rte de Narbonne</s1><s2>31062 Toulouse</s2><s3>FRA</s3><sZ>5 aut.</sZ></fA14><fA18 i1="01" i2="1"><s1>SPIE Europe</s1><s3>INC</s3><s9>org-cong.</s9></fA18><fA18 i1="02" i2="1"><s1>Comité national d'optique et de photonique</s1><s3>FRA</s3><s9>org-cong.</s9></fA18><fA18 i1="03" i2="1"><s1>Society of Photo-optical Instrumentation Engineers</s1><s3>USA</s3><s9>org-cong.</s9></fA18><fA20><s2>61921M.1-61921M.9</s2></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA26 i1="01"><s0>0-8194-6248-9</s0></fA26><fA43 i1="01"><s1>INIST</s1><s2>21760</s2><s5>354000153505160310</s5></fA43><fA44><s0>0000</s0><s1>© 2006 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>06-0456032</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE, the international Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this study, we presented high-performance flexible organic light-emitting diodes (FOLEDs); to do so, we prepared indium-tin oxide (ITO) thin layers by ion beam sputtering (IBS) on polyethylene terephtalate (PET) substrates in soft low temperature conditions. The IBS technology seems well adapted to us to adjust the conduction level of the interface films to the one of the various organic materials making up the fabrication processes of the organic optoelectronic components; moreover this technique does not require a high substrate temperature or an annealing after ITO deposition to crystallize the obtained layers. Because of the great number of deposition parameters (oxygen flow, substrate temperature, deposition rate...) playing interdependent roles and strongly influencing the electrical, optical and structural properties of the layers, we optimized the effects of these different parameters separately by using electrical and optical characterizations as well as X-ray diffraction analyses. The performances of FOLEDs on PET substrate with different ITO thicknesses were investigated and compared to the ones of a conventional organic light-emitting diode realized on glass substrate and according to the same device configuration.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dispositif électroluminescent</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electroluminescent device</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Dispositivo electroluminiscente</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Haute performance</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>High performance</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Alto rendimiento</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Diode électroluminescente organique</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Organic light emitting diodes</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Couche ITO</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>ITO layers</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Pulvérisation faisceau ionique</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Ion beam sputtering</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Pulverización haz iónico</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Procédé fabrication</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Manufacturing process</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Procedimiento fabricación</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Optoelectronic device</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Température recuit</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Annealing temperature</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Temperatura recocido</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Caractéristique optique</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Optical characteristic</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Característica óptica</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Optimisation</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Optimization</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Optimización</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Diffraction RX</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>X ray diffraction</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Difracción RX</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Matériau transparent</s0><s5>22</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Transparent material</s0><s5>22</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Material transparente</s0><s5>22</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Matériau conducteur</s0><s5>23</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Conducting material</s0><s5>23</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Material conductor</s0><s5>23</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Couche oxyde</s0><s5>24</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Oxide layer</s0><s5>24</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Capa óxido</s0><s5>24</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Couche mince</s0><s5>25</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Thin film</s0><s5>25</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Capa fina</s0><s5>25</s5></fC03><fN21><s1>303</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Organic optoelectronics and photonics. Conference</s1><s2>2</s2><s3>FRA</s3><s4>2006</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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